| 摘要 |
PROBLEM TO BE SOLVED: To provide a wet etching method of a compound semiconductor, whereby the change in tapered shape is suitably adjusted, both in a perpendicular and a lateral direction with a single wet etching on a compound semiconductor layer formed with an even thickness. SOLUTION: In the wet etching method of a compound semiconductor, a laminated compound semiconductor layer is formed, which includes two layers of compound semiconductor layers 31 and 32 having different etching rates, and etching is carried out from the end surface of the laminated compound semiconductor layer, to form a tapered shape 113 on the end surface of the lower compound semiconductor layer 31. |
