| 摘要 |
PURPOSE:To make it possible to remove easily and thoroughly residual matters on a semiconductor wafer that are hard to remove by adopting an oxidation process for all the surface of a wafer and an HF treatment (removal of oxidation film). CONSTITUTION:Semiconductor wafers are arranged on a quartz boat that are through wafer inspection process 21 to inspect the specification of semiconductor wafers, wafer cleaning process 22, dopant stacking process 23, simultaneous expansion process 24, and wafer separation process 25. The wafer is put in an oxidation furnace to oxidize the whole surface of the wafer (wafer whole surface oxidation process 26) with wet oxygen at 1,000-1,200 deg.C for one hour. Next, semiconductor or wafers that are finished with the oxidation are HF-treated (oxidation film removal) process 27. Namely, a specified number of semiconductor wafers are dipped in the HF solution for about 2min to etch the oxidation film formed on the whole surface of a semiconductor wafer. By this process oxides as well as residual matters are removed and very clean surfaces are obtained. |
