发明名称 ELECTROLESS PLATING SOLUTION AND METHOD OF FORMING WIRING WITH THE SAME
摘要 An electroless plating solution which less influences semiconductor properties while attaining a controlled plating rate and does not pose a problem concerning health control of workers; and a method of wiring formation which comprises an electroless plating step employing the electroless plating solution. This electroless copper plating solution is characterized by containing divalent copper ions, a complexing agent, an aldehyde-acid, and an organic alkali. It is suitable for filling the grooves in a semiconductor substrate surface with copper through a step in which a subsidiary seed layer for reinforcing a copper seed layer formed in the wiring grooves is formed and a step in which electroplating is conducted using as a feeder layer the seed layers including the subsidiary seed layer.
申请公布号 WO0146494(A1) 申请公布日期 2001.06.28
申请号 WO2000JP09099 申请日期 2000.12.21
申请人 EBARA CORPORATION;KABUSHIKI KAISHA TOSHIBA;INOUE, HIROAKI;MISHIMA, KOJI;NAKAMURA, KENJI;OKUYAMA, SHUICHI;MATSUDA, TETSUO;KANEKO, HISASHI 发明人 INOUE, HIROAKI;MISHIMA, KOJI;NAKAMURA, KENJI;OKUYAMA, SHUICHI;MATSUDA, TETSUO;KANEKO, HISASHI
分类号 C23C18/16;C23C18/40;H01L21/288;(IPC1-7):C23C18/40;H01L21/320 主分类号 C23C18/16
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