| 摘要 |
<p>Disclosed is a computer-implemented method for simulating a semiconductor device, comprising steps of inputting physical constants of the semiconductor device; performing iterative calculation in which potential distribution, electron current density, and hole current density are solved using a drift-diffusion model represented by charge conservation equations, electron current continuation equations, and hole current continuation equations; wherein each iteration of the calculation comprises steps of: calculating an expansion amount of a band gap using an interim solution to take into consideration a quantum effect in an inversion layer; correcting potentials of electrons and holes with the expansion amount of the band gap to take into consideration the quantum effect in the inversion layer; wherein the expansion amount is obtained by steps of providing a provisional term representing the expansion amount, based on a calculation equation in accordance with a van Dort model; regarding the provisional term as being caused by zeroth-order energy perturbation due to an electric field perpendicular to an interface between a semiconductor and an insulating film; adding one or more terms representing first- and/or higher-order energy perturbation due to the electric field perpendicular to the interface between the semiconductor and the insulating film to the provisional term; and setting the sum of the addition as the expansion amount. <IMAGE></p> |
