HORIZONTAL JUNCTION FIELD-EFFECT TRANSISTOR

摘要

A horizontal SiC JFET including a high-mobility-carrier channel region is manufactured with high yield using an n-type SiC substrate. The horizontal JFET comprises an n-type SiC substrate (1n), p-type SiC film (2) formed on t he front surface of the n-type SiC substrate, n-type SiC film (3) formed on a p - type SiC film and including a channel region (11), source and drain regions (22, 23) formed on the n-type SiC film and separated by the channel region, and a gate electrode (14) formed in contact with the n-type SiC substrate (i n).