| 摘要 |
<p>A thermal process chamber (10) is provided for processing substrates contained therein, comprising (i) a main processing portion (12) in which a substrate to be processed may be positioned, the processing portion defining a first area (44) and providing an opening (21) through which a substrate to be processed may be inserted into and removed from the first area (44) of the process chamber; (ii) an upper portion (11), positioned above the main processing portion, defining a second area (39) and providing a closed end for the process chamber; (iii) a gas injector (18) for providing gas to the second area (39); and (iv) a gas distribution plate (20) separating the first area (44) from the second area (39). The gas distribution plate provides a plurality of passageways (40, 42) for permitting gas provided to the second area to pass into the first area. The gas distribution plate (20) is formed integrally with the main processing portion (12) and with the upper portion (11). In one embodiment, the entire thermal process chamber (10), including the main processing portion (12), the upper portion (11), the gas injector (18), and the gas distribution plate (20) are comprised of silicon carbide (SiC). <IMAGE></p> |
