| 摘要 |
PROBLEM TO BE SOLVED: To obtain an epitaxial composite structure at least having a crystal structure in which the thin film of a simple perovskite type crystal is epitaxially grown on a fluorite-type crystal so as to form (011) orientation, and useful as a crystalline material for forming an element having a high performance and reliability, and capable of being highly integrated, and further to provide a ferroelectric element and a superconductor element by utilizing the structure. SOLUTION: This epitaxial composite structure has the thin film of the simple perovskite type crystal epitaxially grown in (011) orientation on the fluorite-type crystal in the (001) orientation. Preferably, the epitaxial composite structure has the thin film comprising the simple perovskite type crystal epitaxially grown in the (011) orientation on the fluorite-type crystal in the (001) orientation, and a laminar perovskite structure epitaxially grown thereon. |
