发明名称 Discrete silicon capacitor
摘要 A capacitor, including a substrate, a first interconnect layer disposed upon the substrate and a first insulating layer disposed on the first interconnect layer. A first metal layer is disposed on the first insulating layer and formed as at least two regions, the at least two regions of the first metal layer connected to the first interconnect layer through vias. A second insulating layer is disposed on the first metal layer. A second metal layer is disposed on the second insulating layer and is formed as at least two regions. The capacitor further includes a third insulating layer disposed on the second metal layer, a second interconnect layer disposed on the third insulating layer and connecting to the at least two regions of the second metal layer through vias. Finally, a first terminal is connected to the first interconnect layer and a second terminal is connected to the second interconnect layer.
申请公布号 US6252760(B1) 申请公布日期 2001.06.26
申请号 US19990320241 申请日期 1999.05.26
申请人 SUN MICROSYSTEMS, INC. 发明人 SEN BIDYUT;GANESAN VIDYASAGAR;KASKEY JEFFREY;BOYLE STEVEN
分类号 H01L23/538;H01L23/64;(IPC1-7):H01G4/228 主分类号 H01L23/538
代理机构 代理人
主权项
地址