| 摘要 |
1275418 Semi-conductor devices TELEFUNKEN PATENTVERWERTUNGS GmbH 12 Dec 1969 [21 Dec 1968] 60819/69 Heading H1K A planar transistor having a plurality of parallel strip-shaped emitter regions is provided with an emitter electrode in the form of a strip extending over an insulating layer transversely to the emitter strips which it contacts through apertures in the insulating layer. The base electrode also comprises a strip extending parallel to the emitter electrode and contacts the base region through apertures in the insulating layer. As shown, Fig. 3, a power transistor having a plurality of parallel strip-shaped emitter regions 6 in a single base region 4 is formed in a body 1 of N type Si by conventional photomasking, etching and diffusion methods using an insulating layer 3 of SiO, SiO 2 or Si 3 N 4 . Parallel strip-shaped contact windows are formed to expose the emitter regions and the base region between the emitter regions and Al is deposited in the windows to form emitter and base contact strips 7 and 8 respectively. A layer 9 of insulating material is deposited over the surface, short windows 10, 11 are etched and conductive tracks 12, 13 are deposited so that each of the tracks 12 contacts each emitter contact strip 7 and each of the tracks 13 contacts each of the base contact strips 8. The tracks 12 are joined by a web 14 and the tracks 13 by a web 15 and these webs may be thickened to form beam leads which project over the edge of the body after the wafer is diced, Fig. 4 (not shown). The tracks 12, 13 and webs 14, 15 may be of Al and the webs may be thickened by depositing Au. |
