发明名称 Methods and apparatus for stripping photoresist and polymer layers from a semiconductor stack in a non-corrosive environment
摘要 The present invention relates to method and apparatus for removing photoresist material from a wafer surface. In particular, the present invention employs a dry strip process to remove photoresist material that remains after conductive material has been etched to form conductive features. The inventive process includes a reactive ion strip process that includes fluorine, which forms salts with conductive material embedded in the photoresist material. The salts are then removed from the wafer surface by dissolving them in a solvent such as deionized water.
申请公布号 US6251568(B1) 申请公布日期 2001.06.26
申请号 US19990247234 申请日期 1999.02.09
申请人 CONEXANT SYSTEMS INC. 发明人 HSIA SHAO-WEN;HUANG PETER Y.
分类号 G03F7/42;H01L21/02;H01L21/311;H01L21/3213;(IPC1-7):G03F7/36 主分类号 G03F7/42
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