发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method for producing a semiconductor device includes the steps of: forming an impurity diffusion layer for controlling a threshold voltage by ion implantation; and conducting a high-temperature rapid heat treatment for recovering crystal defects generated by the ion implantation. More specifically, treatment conditions for the high-temperature rapid heat treatment are set in such a manner that interstitial atoms causing the crystal defects are diffused, and impurities in the impurity diffusion layer are not diffused. For example, the high-temperature rapid heat treatment is conducted in a temperature range of about 900° C. to about 1100° C.
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申请公布号 |
US6251718(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US19980011891 |
申请日期 |
1998.02.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
AKAMATSU KAORI;ODANAKA SHINJI;UMIMOTO HIROYUKI |
分类号 |
H01L21/265;H01L21/28;H01L21/324;H01L21/74;H01L21/8238;H01L29/10;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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