发明名称 |
Implant method to improve characteristics of high voltage isolation and high voltage breakdown |
摘要 |
A layer of well oxide is grown over the n-well or p-well region of the semiconductor substrate. A deep n-well implant is performed in high voltage device region, followed by a deep n-well drive-in of the deep n-well implant. The well oxide is removed; the field oxide (FOX) region is created in the high voltage device region. A layer of sacrificial oxide is deposited on the surface of the semiconductor substrate. A low voltage cluster n-well implant is performed in the high voltage PMOS region of the semiconductor substrate followed, for the high voltage NMOS region, by a low voltage cluster p-well implant which is followed by a buried p-well cluster implant.
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申请公布号 |
US6251744(B1) |
申请公布日期 |
2001.06.26 |
申请号 |
US19990356870 |
申请日期 |
1999.07.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
SU HUNG-DER;LIN CHRONG-JUNG;CHEN JONG;CHU WEN-TING;SUNG HUNG-CHENG;KUO DI-SON |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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