| 摘要 |
PURPOSE: To provide a method of correcting a light proximity effect so that the wiring width in the straight line part between the bending parts of a 'U shaped' pattern has a prescribed wiring width. CONSTITUTION: This method for correcting the light proximity effect corrects the mask wiring pattern in order to compensate the light proximity effect when forming an etching mask by transferring the mask wiring pattern by photolithography. The method described above includes a first step of extracting the 'U shaped' pattern of the design wiring pattern, a second step of providing the inner edges in the two bending parts of the 'U shaped' pattern of the mask wiring pattern with notch correction patterns according to a light proximity effect correction rule, a third step of calculating the spacing along the straight line part between the opposite ends of the notch correction pattern, a fourth step of comparing the spacing between the ends and a set spacing, and a fifth step of providing the bending parts again with the short notch correction pattern by shortening the length of the pattern portion along the straight line part of the notch correction pattern so that the spacing between the opposite ends of the notch correction pattern is to be a set spacing. |
