| 摘要 |
<p>PURPOSE: A method and a device for etching are provided to process without generating sticking materials around an etched position and to finely process for a micro machine, an IC(Integrated Circuit) or a diode device. CONSTITUTION: Laser beams(1) are modulated to pulse arrays(5-1) by a machine shutter(4-1). The laser beams illuminates a photo mask(6). The laser beams are projected through a projecting lens(7) by a mask pattern(8). The projected image is projected on the surface of a processed material(2). The laser beams are irradiated as pulses when the processed material(2) is sublimated. The laser beams etches the processed material by controlling through the machine shutter. The etched hole is about 30micrometers. A liquefied silicon is solidly stuck around the processed hole. Thereby, the clean hole is formed without stuck materials.</p> |
