发明名称 Detection of voids in semiconductor wafer processing
摘要 A method for testing the deposition and/or the removal of a material within a recess on the surface of a sample. An excitation beam is directed onto a region of the sample in a vicinity of the recess, and an intensity of X-ray fluorescence, emitted from the region in a spectral range in which the material is known to fluoresce, is measured. A quantity of the material that is deposited within the recess is determined responsive to the measured intensity.
申请公布号 AU1730001(A) 申请公布日期 2001.06.25
申请号 AU20010017300 申请日期 2000.12.05
申请人 JORDAN VALLEY APPLIED RADIATION LTD.;ISAAC MAZOR;LONG VU 发明人 ISAAC MAZOR;LONG VU
分类号 G01N23/223;H01L21/66;H01L21/768 主分类号 G01N23/223
代理机构 代理人
主权项
地址