INxGa1-xP STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR,申请号KR1020007005795-传众专利搜索

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发明名称	INxGa1-xP STOP-ETCH LAYER FOR SELECTIVE RECESS OF GALLIUM ARSENIDE-BASED EPTITAXIAL FIELD EFFECT TRANSISTORS AND PROCESS THEREFOR
摘要
申请公布号	KR20010052109(A)	申请公布日期	2001.06.25
申请号	KR1020007005795	申请日期	2000.05.26
申请人		发明人
分类号	H01L21/338	主分类号	H01L21/338
代理机构		代理人
主权项
地址

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