摘要 |
PURPOSE: To solve the problems of conventional IT-CCD that a more sophisticated micromachining technology is required for forming a transfer electrode in a horizontal transfer CCD as the pixel density increases and power consumption of the horizontal transfer CCD increases because the load capacitance increases at a pulse supply terminal used for supplying a drive pulse to the horizontal transfer CCD. CONSTITUTION: At the time of fabricating an IT-CCD comprising multiple photoelectric conversion elements arranged in a plurality of rows and columns, a plurality of vertical transfer CCDs for transferring signal charges stored in these photoelectric conversion elements to horizontal transfer CCDs, and read gate regions for controlling read out of signal charges stored in each photoelectric conversion element to the vertical transfer CCD for each photoelectric conversion element, every other vertical transfer CCD is provided with an addition channel for jointing two vertical transfer CCDs.
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