| 摘要 |
PURPOSE: To provide a thin-film transistor for liquid crystal displays, where a light leak current is reduced by covering the LDD region of the thin-film transistor with a gate electrode. CONSTITUTION: In this thin-film transistor for liquid crystal displays formed on a transparent substrate 1 consisting of a gate electrode 11, a source 7 and a drain 8 which are provided so as to sandwich a channel region 5 directly under the gate electrode 11, and an LDD region formed between the channel region 5 and the source 7, and between the channel region 5 and the drain 8, the gate electrode 11 is provided with a light-shielding part 11A for covering the LDD regions 6 and 6 partially or in entirety.
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