| 摘要 |
PURPOSE: Provided are a sulfonium salt compound used as a photo-acid generator in a chemically amplified photoresist material, a chemically amplified photoresist composition using the sulfonium salt compound, and a pattern forming method using the photoresist composition. CONSTITUTION: The sulfonium salt is represented by the formula(1), wherein R1 and R2 is linear alkyl, branched alkyl, monocycloalkyl or cyclic alkyl network, optionally such that the saturated alkyl groups form a ring or together form a ring substituted by an oxo group, R3-R6 are H, halogen, C1-C4 alkyl or alkoxy, X is -CH2-, -C2H4- or -OCH2-, wherein the oxy group being bonded to the benzene ring, and Y is a counterion. And the pattern forming method comprises the steps of: forming a photoresist layer by spreading a positive or negative photoresist material containing the sulfonium salt compound on a substrate; exposing the photoresist layer to the light having a wavelength of 130-220nm; baking and developing the photoresist layer.
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