发明名称 HEATING TREATMENT METHOD AND ITS APPARATUS
摘要 PURPOSE: A heating treatment apparatus is provided to prevent the generation of an irregularity in the line widths of a pattern consisting of a coating film on a substrate. CONSTITUTION: A sensor part(64) for measuring the thickness of a resist film on the surface of a wafer(W) is movably provided in a post exposure baking device(44) and the measurement is measured during a heating treatment on the wafer(W). The set temperature of a heater(62) which is built in a heating plate(61) is adjusted from the correlation between the previously found step and the final line width of a pattern consisting of a coating film on the substrate after continuous treatments on the substrate so that the step is confined within the prescribed extent.
申请公布号 KR20010051371(A) 申请公布日期 2001.06.25
申请号 KR20000064535 申请日期 2000.11.01
申请人 TOKYO ELECTRON LIMITED 发明人 OGATA KUNIE
分类号 H01L21/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/00
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