HDP CAPPING LAYER OR POLISH LAYER OVER HSQ/PETEOS ILD STACK TO ENHANCE PLANARITY AND GAP-FILL

摘要

PURPOSE: A HDP Capping layer or polish layer over HSQ/PETEOS ILD(inter level dielectrics) stack to enhance planarity and gap-fill is provided to form a dielectric stack with chemical and mechanical polishing process, without forming gaps, joints and divots. CONSTITUTION: The method forms an ILD, using high density plasma cap layers(HDP). A liner layer and an HSQ layer are deposited in a metal wire on a semiconductor body, followed by deposition of PETEOS layers on the HSQ layer. Gaps, joints or divots may be formed in the HSQ layer. Then HDP cap layers are deposited by means of high deposition ration to etching. The HDP processing forces to open any gaps to have them filed by the HDP materials. A structure formed through the method is subjected to chemical and mechanical polishing process after/before the HDP processing.