POSITIVE PHOTOSENSITIVE COMPOSITION

摘要

PROBLEM TO BE SOLVED: To provide a positive photoresist composition which gives a resist pattern having high sensitivity and high resolution as <=0.15 μm and having a square cross section in the production of a semiconductor device and to provide a positive photoresist composition showing small dimensional shift when a pattern is transferred to a lower layer in an oxygen plasma etching process of a two-layer resist method. SOLUTION: The positive photoresist composition contains an acid- decomposable polymer which contains a silicon-containing recurring unit expressed by formula (I) and a recurring unit of a specified structure expressed by formula (II) and which increases the solubility with an alkali developer by the effect of an acid.