| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist material which can make the gradient of dissolution of a positive or negative resist smaller than that of a resist for a repetitive pattern so as to ensure wide margins for focusing and exposure for an isolated left pattern with the positive or negative resist and does not cause the lowering of a margin for PEB temperature as a conventional defect. SOLUTION: The resist material contains one or more nitrogen-containing compounds of formula 1 (where R1 and R2 are H or the same or different 1-20C alkyls or 6-20C aryls and may contain hydroxyl, carboxyl, carbonyl, ester, amino or the like; R3 is the same or different 1-20C alkyls or 6-20C aryls; R1 and R2, R1 and R3, or R2 and R3 may bond to each other to form a ring). |
