发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for forming a micro-electrode with a size smaller than a limiting dimension of precision in the exposing unit, and a minute wiring at the same time. SOLUTION: An electrode region includes a vertically extending electrode region 4 in contact with an edge face of a lower-layer side wall 3 in an elongated direction, and a wiring region 5 in a body. The wiring region 5 is put in contact with an upper edge of the electrode region 4 and extended partly in a horizontal direction and crossed with the lower-layer side wall 3 in the elongated direction.
申请公布号 JP2001168056(A) 申请公布日期 2001.06.22
申请号 JP19990351022 申请日期 1999.12.10
申请人 FUJITSU LTD 发明人 ADACHIHARA TAKAMI
分类号 H01L21/3205;H01L21/28;H01L21/768;(IPC1-7):H01L21/28 主分类号 H01L21/3205
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