| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which a leakage current is restrained, ensuring necessary capacitance for normal operation as a capacitor. SOLUTION: In a semiconductor device, capacitor 10 is composed of a lower electrode 8A of titanium nitride film, a first capacitor insulating film 9A of tantalum oxide film formed on the lower electrode 8A, a second capacitor insulating film 11A of titanium oxide film which is 0.2 to 1 nm in thickness and formed on an interface between the first capacitor insulating film 9A and the lower electrode 8A, and an upper electrode 12A of titanium nitride film formed on the first capacitor insulating film 9A. The lower electrode 8A is connected to an N-type diffusion region 5 through a capacitor contact 13. |
