SEMICONDUCTOR CERAMIC AND ELECTRONIC DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide semiconductor ceramic having a high breakdown voltage in BaTiO3-based semiconductor ceramic having positive temperature characteristic resistance. SOLUTION: In a BaTiO3-based semiconductor ceramic having positive temperature characteristic of resistance, boundary temperature between a temperature region showing a positive temperature coefficient of resistance at a temperature of at least the Curie temperature and a temperature region showing a negative temperature coefficient of resistance at a temperature higher than this temperature is at least 180 deg.C higher, e.g. 370 deg.C higher than the Curie temperature.