| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which information can be read out from a memory cell at high speed. SOLUTION: A semiconductor memory 100 is provided with a differential sense amplifier 9 having an input terminal 9a and an input terminal 9b, an information read-out section 110a, a reference section 110b, and a control section 140. The information read-out section is composed of a main bit line MBL connected to the input end 9a, a sub-bit line SBL consented to the main bit line through a selecting gate 4a, a memory cell 1 connected to the sub-bit line and activated selectively in accordance with voltage of the word line WL, a pre-charge section 120a precharging the input terminal 9a an the main bit line MBL to voltage Vdd, and a reset section 130b resetting the sub-bit line SBL to ground voltage Vss. After the control section 140 pre-charges the input terminal 9a and the main bit line MBL to voltage Vdd and resets the sub-bit line SBL to ground voltage Vss, controls the pre-charge section 120a, the reset section 130, and the selecting gate 4a.</p> |
