| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed nonvolatile semiconductor storage device where the rise of both of an interface property between a semiconductor substrate and an insulating layer and a ferroelectric property can be expected, and the dispersion of property is small, and the voltage is low. SOLUTION: This is a semiconductor storage device which has such constitution that the amorphous insulating layer 3, a ferroelectric layer 4 having orientation, and an upper electrode 6 are made in order on a semiconductor substrate 1.
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