| 摘要 |
A method of analyzing substances is provided, which improves the correctness in analysis of desired substances applying some bad effect to a semiconductor device. In the first step, a gas to be analyzed is contacted with an absorbent, thereby absorbing substances existing in the gas to the absorbent. The absorbent is made of a same material as that of a semiconductor material to be processed in the gas. In the second step, the absorbent is heated to thermally desorb the absorbed substances from the absorbent at a specific thermally desorbing temperature. In the third step, the desorbed substances are physically separated to be identified by using an analytical system. Preferably, the absorbent used in the first step is made of bits or particles of polycrystalline, single-crystal, or amorphous Si. The absorbent is preferably located in a hollow refractory tube and the gas is injected into the tube in the first step.
|
