| 摘要 |
In a method for manufacturing semiconductor light emitting device, when a gallium nitride based compound semiconductor layers which include at least an n-type layer and p-type layer and which form a light emitting layer, are laminated on a substrate and heat treatment is performed for activation of the p-type layer of the laminated semiconductor layers, the heat treatment is performed under an atmosphere including oxygen. With this arrangement, the heat treatment for activating the p-type layer of the laminated semiconductor layers comprising gallium nitride based compound semiconductor can be performed in a short time and moreover to reliably perform activation.
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