发明名称 Photo-mask and method of exposing and projection-exposing apparatus
摘要 A projection-exposing apparatus has a mask which has a pattern formed with a pitch PR, an illuminating optical system for applying illuminating light from a light source to the mask, a projection optical system for projecting an image of the pattern onto a photosensitive substrate, and a deflecting grating member formed with a pitch PG disposed between the light source and the pattern of the mask for generating diffracted light. The pitch PG of the deflecting grating member is defined in the relation PG=2PR. The diffraction grating member is remote from the pattern on the mask by a distance DELTAt, where DELTAt>=PG/2NAIL, NAIL being the numerical aperture of the illumination optical system.
申请公布号 US6249335(B1) 申请公布日期 2001.06.19
申请号 US19950473995 申请日期 1995.06.07
申请人 NIKON CORPORATION 发明人 HIRUKAWA SHIGERU;SHIRAISHI NAOMASA;KAMEYAMA MASAOMI
分类号 G03F1/14;G03F7/20;(IPC1-7):G03B27/42;G03B27/72 主分类号 G03F1/14
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