| 摘要 |
PURPOSE: An impurity concentration apparatus in a silicon wafer, and a method for quantitatively analyzing impurities in a silicon wafer and a silicon ingot using the same are provided which can easily obtain the concentration of a small amount of impurities contained in an initial silicon wafer and a silicon ingot by converting the measured concentration of the impurities after growing a silicon ingot by smelting a silicon wafer in a small scale electric wafer, and measuring a concentration of impurities concentrated in a residual silicon molten solution at that time. CONSTITUTION: In an apparatus for growing a silicon ingot by the Czochralski method, the impurity concentration apparatus in a silicon wafer comprises a crucible support axis (7) transferring a crucible into which a heating element of an induction heating method by an RF coil (5) and a silicon molten solution are charged to a lower direction. The method for quantitatively analyzing impurities in a silicon wafer comprises the steps of charging the silicon wafer into a crucible and smelting the silicon wafer; concentrating impurities in the silicon wafer into a residual silicon molten solution by growing a silicon ingot from a silicon molten solution; measuring C1, a concentration of impurities concentrated in the residual silicon molten solution; and calculating C0, a concentration of impurities in the silicon wafer from the following Equation: C0=C1(1-g)¬1-k, where g=Vs/Vr, and k is a segregation coefficient of impurities in silicon; and Vs is a volume of the silicon ingot, and Vr is a volume of the silicon molten solution.
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