| 摘要 |
PURPOSE: To form a polysilicon film, without increasing the number of processes and decreasing a surface area by selectively growing an amorphous/polysilicon multi-phase film and continuously forming a projecting and recessed polysilicon film, and supplying a phosphorus compound and its dilution gas during the heating of a semiconductor substrate for annealing. CONSTITUTION: A capacitor electrode, where a natural oxide film 30 adheres, consists of an interlayer film 33 that is uniformly formed on a semiconductor substrate 34, an amorphous silicon film 31, and a polysilicon 32 for connecting the substrate 34. As pretreatment, a semiconductor wafer is dipped into diluted fluoric acid to eliminate and dry the natural oxide film. After that, the wafer is thrown into a cassette module, evacuated, and nitrogen is allowed to flow for control. At this time, hydrogen atom 36 is combined with a dangling bond 35 on the surface of amorphous silicon 31. Wafers in a controlled module are carried, one by one, to a boat connected to the lower portion of a surface reaction thin-film formation device via a wafer transfer module. A connection hydrogen atom 36 of a bond 35 is separated by heating, thus obtaining a multi- phase thin film.
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