| 摘要 |
PURPOSE: A method of manufacturing GaN electron device is provided to minimize the resistance of a source electrode and a drain electrode without decreasing the characteristics of the device. CONSTITUTION: An undoped GaN is grown on the substrate to form a buffer layer(20). The temperature is lowered whenever a buffer layer is formed and the undoped GaN is grown on the buffer layer to form an epitaxial layer(30). N type GaN including silicon is grown thereon to form an active layer(40). The undoped GaN is grown thereon to form an etch stopper layer(50). N+type GaN including silicon is grown thereon to form a contact layer(60). Parts of the contact, etch stopper, active and epitaxial layers are etched by MESA etching. A first photoresist layer is patterned on the etched part and a part of the contact layer in the form of the source and drain electrodes(90,100). Silicon(110) is doped on the epitaxial and active layers and metal is deposited to form the source and drain electrodes using the first photoresist as a mask. After removing the first photoresist, a second photoresist is patterned along with the form of the gate electrode. A gate recess etching is performed using the second photoresist as a mask. A gate electrode is formed on the etch stopper layer exposed by the contact hole.
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