METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method and an apparatus for manufacturing a semiconductor device which comprises a process of manufacturing a silicon nitride film, allows the maintenance frequency to be possibly lessened, and can suppress or prevent the growth of particles. CONSTITUTION: A step of forming a silicon nitride film on a semiconductor wafer disposed in a quartz reaction chamber by the thermal CVD method with bis-tertiary butylaminosilane and NH3 flowing as raw material gases in the quartz reaction chamber is repeated at a specified number of times, then NF3 gas is flowed in the reaction chamber to remove silicon nitrogen formed in the reaction chamber, and again a step of forming a silicon nitride film on a semiconductor wafer disposed in a quartz reaction chamber by the thermal CVD method with bis-tertiary butylaminosilane and NH3 flowing as raw material gases in the quartz reaction chamber is repeated at a specified number of times.