METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE BY USING PARTIAL DEPOSITION OF INTERLAYER DIELECTRIC LAYER

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided with using a partial deposition of an interlayer dielectric layer instead of a conventional self-aligned contact process. CONSTITUTION: The method includes forming a temporary roof(120') over an active area(104) to cover a gate pattern disposed thereunder and a planned region(126) for the contact, then depositing the interlayer dielectric layer(124) over an entire structure, then removing the temporary roof(120') and a portion of the interlayer dielectric layer(124) on the temporary roof(120') by planarization, and then filling the contact region(126) with conductive material. In the method, the temporary roof(120') is formed from an oxide layer by silylation or a nitride layer. The method may further use a temporary fence extended downward from ends of the temporary roof(120').