SEMICONDUCTOR DEVICE HAVING Y-SHAPED ISOLATING LAYER AND METHOD FOR MANUFACTURING ISOLATING LAYER WHEREIN DIVOT IS PREVENTED AND PROCESS IS SIMPLIFIED

摘要

PURPOSE: A method for manufacturing an isolating layer wherein a divot is prevented and a process is simplified, is provided to simplify a manufacturing process by forming a trench by using a photoresist layer pattern as an etching mask, and to use a thin nitride layer liner for a double purpose wherein the nitride layer liner in a trench prevents the sidewall of the trench from being oxidized and the nitride layer liner on a semiconductor substrate functions as a planarization stop layer. CONSTITUTION: A trench is formed in a semiconductor substrate(100). A thermal oxide layer(118) is formed on the entire surface of the semiconductor substrate having the trench. A nitride layer liner(119) is formed on the thermal oxide layer. The trench is filled with a gap fill isolation layer while the nitride layer liner formed in an upper corner of the trench is eliminated. The entire surface of the semiconductor substrate is planarized by using the nitride layer liner as a planarization stop layer. The nitride layer liner exposed in planarizing the gap fill isolation layer is eliminated.