发明名称 |
SEMICONDUCTOR STORAGE DEVICE |
摘要 |
A control section (140) controls a precharge section (120a) to precharge an input end (9a) and a main bit line (MBL) to a power supply voltage Vdd, a reset section (130b) to reset a sub-bit line (SBL) to a ground voltage VSS, and a select gate (4a) to redistribute a part of charge to the sub-bit line (SBL) from the precharged input end (9a) and main bit line (MBL).
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申请公布号 |
WO0143140(A1) |
申请公布日期 |
2001.06.14 |
申请号 |
WO2000JP08685 |
申请日期 |
2000.12.07 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;KOJIMA, MAKOTO |
发明人 |
KOJIMA, MAKOTO |
分类号 |
G11C16/06;G11C7/06;G11C7/12;G11C7/18;G11C16/28;(IPC1-7):G11C16/28 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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