| 摘要 |
The invention relates to a method for producing a hard mask on a substrate (10) and, in particular, on a primary area of a semiconductor substrate. The inventive method comprises the following steps: forming a first hard mask layer (n) on the substrate (10); forming at least one additional hard mask layer (n-1) on the first hard mask layer (n); structuring the additional hard mask layer (n-1) in such a way that an area of the first hard mask layer (n) is exposed, and; structuring the first hard mask layer (n) while using the additional hard mask layer (n-1) as a mask so that an area of the substrate (10) is exposed. Additional hard mask layers (n-1, n-2, ..., 1) can be formed on the first hard mask layer (n), which are successively structured while using at least one overlying hard mask layer as a mask, until the area of the substrate (10) is exposed. |
