发明名称 SEMICONDUCTOR DEVICE COMPRISING LAYERED POSITIONAL DETECTION MARKS AND MANUFACTURING METHOD THEROF
摘要 A semiconductor device that permits effective use of a region positioned under a positional detection mark or an external electrode, i.e., the region that has not been conventionally utilized may be provided. In a semiconductor device including a lower layer, a shielding film and an upper layer, the lower layer includes at least one selected from the group consisting of a positional detection mark, a quality testing element, and a circuit element. The shielding film is formed on the lower layer and shields an energy beam used for detecting a positional detection mark. The upper layer includes a positional detection mark formed on the shielding film.
申请公布号 US2001003382(A1) 申请公布日期 2001.06.14
申请号 US19980197765 申请日期 1998.11.23
申请人 SUGIYAMA MASAO 发明人 SUGIYAMA MASAO
分类号 G03F7/20;G03F9/00;H01L21/027;H01L23/544;(IPC1-7):H01L23/544 主分类号 G03F7/20
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