| 摘要 |
<p>A method is presented for forming a transistor gate structure (41, 42). A gate oxide layer (41) is formed. Gate material (42) is deposited on the gate oxide layer (41). A layer of silicon oxynitride (43) is deposited on the gate material (42). The layer of silicon oxynitride (43), the gate material (42) and the gate oxide layer (41) are etched to form a gate structure (41, 42). A silicon oxynitride region (43) remains on top of the gate structure (41, 42). A wet chemical process is performed to remove the silicon oxynitride region (43) from the top of the gate structure (41, 42). After performing the wet chemical process, spacers (61, 62) are formed around the gate structure (41, 42).</p> |
