| 摘要 |
Silicon carbide power devices (10, 10', 30) having trench-based charge coupling regions include a silicon carbide substrate having a silicon carbide drift region (12) of first conductivity type (e.g., N-type) and a trench (T1, T2) therein at a first face (11a) thereof. A uniformly doped silicon carbide charge coupling region (14a, 14b) of second conductivity type is also provided in the trench. This charge coupling region forms a P-N rectifying junction with the drift region that extends along a sidewall of the trench. The drift region and charge coupling region are both uniformly doped at equivalent and relatively high net majority carrier doping concentrations. Siilicon carbide switching devices that use the present charge coupling regions include Schottky barrier rectifiers (SBRs) (10, 10'), junction field effect transistors (JFETs) (30) and metal-oxide-semiconductor field effect transistors (MOSFETs) (30). Alternatively, the charge coupling regions may be replaced by semi-insulting regions.
|
