发明名称 |
Semiconductor photodetector |
摘要 |
The present invention provides an optical waveguide structure comprising plural periods of a multi-layered structure which comprises an InGaAs optical absorption layer of a first conductivity type, a pair of first and second InGaAsP cladding layers of the first conductivity type sandwiching the InGaAs optical absorption layer, and a pair of a first InP layer of the first conductivity type and a second InP layer of a second conductivity type, and the first and second InP layers sandwiching the first and second InGaASP cladding layers. <IMAGE> |
申请公布号 |
EP1107318(A2) |
申请公布日期 |
2001.06.13 |
申请号 |
EP20000126990 |
申请日期 |
2000.12.08 |
申请人 |
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
发明人 |
KUSAKABE, ATSUHIKO |
分类号 |
H01L31/10;H01L31/0232;H01L31/0352;H01L31/103 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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