SEMICONDUCTOR MEMORY DEVICE HAVING DATA LINE ARRAY STRUCTURE PREVENTING NOISE INTERFERENCE

摘要

PURPOSE: A semiconductor memory device having a data line array structure preventing a noise interference is provided to reduce a noise interference between data lines by improving a data array structure. CONSTITUTION: A multitude of data line(DB0-DB3) is insulated with a multitude of word line. The data lines(DB0-DB3) lie at right angles to the word lines. A multitude of memory cell is located on one of intersecting points between the data lines(DB0-DB3) and the word lines. A multitude of sense amplifier is connected with one end portions of each data line(DB0-DB3). The data lines(DB0-DB3) are arrayed as an upper layer line and a lower layer line. The data lines(DB0-DB3) have one or more twisted points(T1,T2,T3). A twisted point of the data line couple(DB0-DB3) corresponds to an intermediate point between twisted points of a neighboring data line couple.