发明名称 |
Photo-assisted post exposure bake for chemically amplified photoresist process |
摘要 |
Acid diffusion induced critical dimension change in a chemically amplified photoresist process is suppressed by lowering the reaction activation energy barrier. Energy required to overcome the reaction activation energy barrier is provided directly to the chemical bonds that are involved in the chemical reactions, rather than providing energy solely by thermal heating, thereby significantly increasing reaction rate without increasing acid diffusion.
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申请公布号 |
US6245491(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US19990245604 |
申请日期 |
1999.02.05 |
申请人 |
NATIONAL SEMICONDUCTOR CORP. |
发明人 |
SHI XUELONG |
分类号 |
G03F7/004;G03F7/38;(IPC1-7):G03F7/38 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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