发明名称 |
Field effect transistor having a floating gate |
摘要 |
A field effect transistor which comprises a semiconductor substrate having a source region and a drain region separated by a channel region; a conductive floating gate formed over a first portion of the channel region adjacent to the doped source region and recessed into the semiconductor substrate; and being separated from the first portion of the channel region by a first insulation layer; and a conductive control gate formed substantially over but electrically isolated from the floating gate and formed over the entire channel region; along with a method for fabricating such is provided.
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申请公布号 |
US6245613(B1) |
申请公布日期 |
2001.06.12 |
申请号 |
US20000556698 |
申请日期 |
2000.04.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;HU CHIH-CHUN |
分类号 |
H01L21/28;H01L21/8247;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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