| 摘要 |
PROBLEM TO BE SOLVED: To remove the problem of occurrence of cracking on an interface, which is caused by shrinkage of a film volume after oxidization in the case where a layer comprising aluminum grown on a semiconductor substrate is selectively oxidized. SOLUTION: A semiconductor layer 102 comprising aluminum is formed, as (a), on a semiconductor substrate 101 so that aluminum composition is gradually raised and thereafter gradually lowered. Alternatively, at the time of crystal growing of the layer comprising aluminum, lamination is made so that the molar number of a group V raw material with respect to the molar number of a group III raw material is gradually varied along the growing direction. Then, patterning, as (b), is carried out, followed by oxidization, as (c), from a side surface. Accordingly, after oxidization, an oxidization degree from an oxidized portion to a non-oxidized portion is consecutively varied. Thus, stress caused by oxidization is scattered to a wide range to suppress occurrence of cracking.
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