| 摘要 |
electronic engineering; p-n rectifier diodes. SUBSTANCE: semiconductor rectifier diode of first design version has its ohmic contact made in the form of single-crystal cylinder of nonmagnetic metal with body-centered or face-centered lattice incorporating faces 111 or 100, its melting point being higher than that of silicon; grown on its external surface is cylinder-shaped degenerated single-crystal silicon n layer whose outer surface bears sequentially formed cylindrical active single-crystal silicon n layer, active single-crystal silicon p layer, degenerated single-crystal silicon p+ layer with multilayer metal contact overall; the latter has two cylindrical layers of desired length made of different nonmagnetic metals; electric conductivity of upper layer of this pair is higher than that of lower one along current flow. Three design versions of rectifier diodes are proposed. EFFECT: suppressed end effect, increased breakdown voltage, reduced electrothermal and magnetothermal degradation, improved stability of diode characteristics. 9 cl, 3 dwg
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