| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting semiconductor device that has double hetero junction structure, high light emission efficiency, and a low operating voltage. SOLUTION: The light-emitting semiconductor device having a double hetero junction is provided with at least the sandwich structure of an n-type clad layer 4, an active layer 5, and a p-type clad layer 6 and is formed of a material that the band gap energy of the active layer is smaller than that of both the clad layers. The material of both clad layers is selected so that the band gap energy of the n-type clad layer becomes smaller than that of the p-type clad layer. |
