| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electro-optical device of new structure. SOLUTION: An electro-optical device is possessed of an active matrix circuit equipped with a first thin film transistor and a drive circuit equipped with a second thin film transistor, where the first and second thin film transistor are each equipped with a semiconductor film formed on the surface of an insulator, a channel forming region formed on the semiconductor film, a source region and a drain region loaded with impurities so as to be given a certain conductivity, a pair of high-resistance regions which are each formed between the source region and the channel forming region and between the drain region and the channel forming region, a gate insulating film formed on the channel forming region and the high-resistance regions, and a gate electrode formed on the gate insulating film, and the pair of high-resistance regions provided in the first thin film transistor are set higher in resistance than those provided in the second thin film transistor.</p> |
